I-heterojunction eyenziwe kwi-amorphous / crystalline silicon (a-Si: H / c-Si) ijongana neempawu ze-elektroniki ezizodwa, ezifanelekileyo kwi-silicon heterojunction (SHJ) iiseli zelanga. Ukudityaniswa kwe-ultra-thin a-Si: H i-passivation layer iphumelele i-voltage ephezulu ye-open-circuit voltage (Voc) ye-750 mV. Ngaphezu koko, i-a-Si: Umaleko woqhagamshelwano we-H, owenziwe nge-n-uhlobo okanye uhlobo lwe-p, unokukhanya kwisigaba esixubeneyo, ukunciphisa ukufunxwa kwe-parasitic kunye nokuphucula ukhetho lomthwali kunye nokusebenza kakuhle kokuqokelela.
LONGi Green Energy Technology Co., Ltd.'s Xu Xixiang, Li Zhenguo, kunye nabanye baye bazuza i-26.6% esebenzayo iseli yelanga ye-SHJ kuhlobo lwe-P-uhlobo lwe-silicon wafers. Ababhali basebenzise i-phosphorus diffusion gettering strategy and use nanocrystalline silicon (nc-Si:H) kubafowunelwa abakhethiweyo, banyusa kakhulu ukusebenza kakuhle kwe-P-type SHJ cell cell ukuya kwi-26.56%, ngaloo ndlela kuseka ibhenchmark entsha yokusebenza ye-P. -uhlobo lweeseli ze-silicon zelanga.
Ababhali banikezela ngengxoxo eneenkcukacha malunga nophuhliso lwenkqubo yesixhobo kunye nokuphucula ukusebenza kwe-photovoltaic. Ekugqibeleni, uhlalutyo lwelahleko yamandla lwenziwa ukumisela indlela yophuhliso lwexesha elizayo lwe-P-uhlobo lwe-SHJ iteknoloji yeseli yelanga.
Ixesha lokuposa: Mar-18-2024